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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 11/51
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MICROSS/On Semiconductor |
Transistors - Bipolar (BJT) - RF DIE TRANSISTOR RF PNP |
In Stock317 More on Order |
|
Manufacturer: MICROSS/On Semiconductor |
Series: * |
Transistor Type: - |
Voltage - Collector Emitter Breakdown (Max): - |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: - |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 12/15V 5.5GHZ 16SOIC |
In Stock568 More on Order |
|
Manufacturer: Renesas Electronics America Inc. |
Series: - |
Transistor Type: 3 NPN + 2 PNP |
Voltage - Collector Emitter Breakdown (Max): 12V, 15V |
Frequency - Transition: 8GHz, 5.5GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
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|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 2 PNP 9V 7GHZ SOT23-6 |
In Stock503 More on Order |
|
Manufacturer: Renesas Electronics America Inc. |
Series: - |
Transistor Type: 2 PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max): 9V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 5.2dB @ 900MHz |
Gain: - |
Power - Max: - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V |
Current - Collector (Ic) (Max): 26mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 |
Supplier Device Package: SOT-23-6 |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16QFN |
In Stock347 More on Order |
|
Manufacturer: Renesas Electronics America Inc. |
Series: - |
Transistor Type: 5 NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-VFQFN Exposed Pad |
Supplier Device Package: 16-QFN (3x3) |
|
|
|
Renesas Electronics America Inc. |
Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16SOIC |
In Stock274 More on Order |
|
Manufacturer: Renesas Electronics America Inc. |
Series: - |
Transistor Type: 5 NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V |
Current - Collector (Ic) (Max): 65mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
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|
Skyworks Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 4V 16GHZ DIE |
In Stock384 More on Order |
|
Manufacturer: Skyworks Solutions Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 4V |
Frequency - Transition: 16GHz |
Noise Figure (dB Typ @ f): - |
Gain: 5.2dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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|
Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB |
In Stock472 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz |
Gain: 25dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-SMD, No Lead |
Supplier Device Package: UB |
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Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB |
In Stock221 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz |
Gain: 25dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-SMD, No Lead |
Supplier Device Package: UB |
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Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB |
In Stock187 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz |
Gain: 25dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 3-SMD, No Lead |
Supplier Device Package: UB |
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Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA TO72 |
In Stock248 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: PNP |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz |
Gain: 25dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: -65°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-72-3 Metal Can |
Supplier Device Package: TO-72 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 70V 332A-03 |
In Stock533 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 70V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 10.8dB |
Power - Max: 90W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V |
Current - Collector (Ic) (Max): 6A |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: 332A-03 |
Supplier Device Package: 332A-03, Style 1 |
|
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|
STMicroelectronics |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V M135 |
In Stock431 More on Order |
|
Manufacturer: STMicroelectronics |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 16V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 9dB |
Power - Max: 70W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V |
Current - Collector (Ic) (Max): 8A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis, Stud Mount |
Package / Case: M135 |
Supplier Device Package: M135 |
|
|
|
STMicroelectronics |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V M135 |
In Stock344 More on Order |
|
Manufacturer: STMicroelectronics |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 16V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 10dB |
Power - Max: 70W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V |
Current - Collector (Ic) (Max): 8A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: M135 |
Supplier Device Package: M135 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS 2NPN EMITTR 30V 744A-01 |
In Stock399 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: 2 NPN (Dual) Common Emitter |
Voltage - Collector Emitter Breakdown (Max): 30V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 10dB |
Power - Max: 125W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V |
Current - Collector (Ic) (Max): 16A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 744A-01 |
Supplier Device Package: 744A-01, Style 1 |
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|
M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 60V |
In Stock261 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 60V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8.5dB |
Power - Max: 5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 750mA |
Operating Temperature: 200°C (TJ) |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock398 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 2.4A |
Operating Temperature: 200°C (TJ) |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock245 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 30W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 3.6A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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Microsemi |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.15GHZ 55AW |
In Stock426 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 55V |
Frequency - Transition: 1.025GHz ~ 1.15GHz |
Noise Figure (dB Typ @ f): - |
Gain: 6.5dB |
Power - Max: 375W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V |
Current - Collector (Ic) (Max): 30A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 55AW |
Supplier Device Package: 55AW |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock160 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 10.16dB ~ 10.25dB |
Power - Max: 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 5.3A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 355J-02 |
In Stock536 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 9dB |
Power - Max: 500W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V |
Current - Collector (Ic) (Max): 29A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 355J-02 |
Supplier Device Package: 355J-02, STYLE 1 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock317 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 7.5dB |
Power - Max: 55W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 6.5A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock595 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8.23dB ~ 9.09dB |
Power - Max: 65W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 7.7A |
Operating Temperature: 200°C (TJ) |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.215GHZ |
In Stock377 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: 1.215GHz |
Noise Figure (dB Typ @ f): - |
Gain: 9.4dB |
Power - Max: 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 32.5A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 63V |
In Stock508 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 63V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 9.73dB ~ 8.85dB |
Power - Max: 130W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 12.5A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 80V |
In Stock663 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 80V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8.32dB |
Power - Max: 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 17A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V |
In Stock366 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 9.11dB ~ 9.69dB |
Power - Max: 170W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 27A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 80V |
In Stock422 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 80V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 8.06dB |
Power - Max: 550W |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Current - Collector (Ic) (Max): 28A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: - |
Supplier Device Package: - |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 11GHZ SOT143R |
In Stock652 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 11GHz |
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz |
Gain: 15.5dB |
Power - Max: 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-143R |
Supplier Device Package: SOT-143R |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 11GHZ TO236AB |
In Stock367 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 11GHz |
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz |
Gain: 12dB |
Power - Max: 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB (SOT23) |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 10GHZ SOT323-3 |
In Stock149 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 10GHz |
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz |
Gain: 13dB |
Power - Max: 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323-3 |