Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP840FESDH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 2.6V 85GHZ 4TSFP	In Stock330 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 2.6V	Frequency - Transition: 85GHz	Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz	Gain: 35dB	Power - Max: 75mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: 4-TSFP
MRF454	M/A-Com Technology Solutions	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 211-11	In Stock367 More on Order	Manufacturer: M/A-Com Technology Solutions	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 12dB	Power - Max: 80W	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V	Current - Collector (Ic) (Max): 20A	Operating Temperature: -	Mounting Type: Chassis Mount	Package / Case: 211-11, Style 2	Supplier Device Package: 211-11, Style 2
BFR360L3E6765XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9V 14GHZ TSLP-3-1	In Stock366 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9V	Frequency - Transition: 14GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz	Gain: 11.5dB ~ 16dB	Power - Max: 210mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-1
2SC5488A-TL-H	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3SSFP	In Stock316 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1dB @ 1GHz	Gain: 12dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, Flat Leads	Supplier Device Package: 3-SSFP
2SC5226A-5-TL-E	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3MCP	In Stock456 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1dB @ 1GHz	Gain: 12dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: 3-MCP
BFP520FH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 3.5V 45GHZ 4TSFP	In Stock222 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 3.5V	Frequency - Transition: 45GHz	Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz	Gain: 22.5dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V	Current - Collector (Ic) (Max): 40mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, Flat Leads	Supplier Device Package: 4-TSFP
BFU530WX	NXP	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 11GHZ SOT323-3	In Stock537 More on Order	Manufacturer: NXP USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 11GHz	Noise Figure (dB Typ @ f): 0.6dB @ 900MHz	Gain: 18.5dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V	Current - Collector (Ic) (Max): 40mA	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323-3
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ USM	In Stock408 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1dB @ 500MHz	Gain: -	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SMINI	In Stock646 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1GHz	Gain: 11dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: S-Mini
MT3S111TU,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF SIGE NPN BIPOLAR TRANSISTOR N	In Stock321 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6V	Frequency - Transition: 10GHz	Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz	Gain: 12.5dB	Power - Max: 800mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, Flat Leads	Supplier Device Package: UFM
MT4S300U(TE85L,O,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF X34 PB-F RADIO-FREQUENCY SIGE HE	In Stock204 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4V	Frequency - Transition: 26.5GHz	Noise Figure (dB Typ @ f): 0.55dB @ 2GHz	Gain: 16.9dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: USQ
SS9018FBU	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.1GHZ TO92-3	In Stock342 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.1GHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 400mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package: TO-92-3
BFS 17P E6433	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.4GHZ SOT23-3	In Stock625 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 1.4GHz	Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz	Gain: -	Power - Max: 280mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V	Current - Collector (Ic) (Max): 25mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
BFR380FH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9V 14GHZ TSFP-3	In Stock182 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9V	Frequency - Transition: 14GHz	Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz	Gain: 9.5dB ~ 13.5dB	Power - Max: 380mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BFR380L3E6327XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9V 14GHZ TSLP-3-1	In Stock500 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9V	Frequency - Transition: 14GHz	Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz	Gain: 7.5dB ~ 16.5dB	Power - Max: 380mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-1
BFR360FH6765XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9V 14GHZ TSFP-3	In Stock227 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9V	Frequency - Transition: 14GHz	Noise Figure (dB Typ @ f): 1dB @ 1.8GHz	Gain: 15.5dB	Power - Max: 210mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: PG-TSFP-3
BFP182WH6327XTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4	In Stock486 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	Gain: 22dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
2SC5086-Y,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SSM	In Stock411 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7GHz	Noise Figure (dB Typ @ f): 1dB @ 500MHz	Gain: -	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 125°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
DMC506E20R	Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 20V 650MHZ SOT363	In Stock584 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: 2 NPN (Dual)	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 650MHz	Noise Figure (dB Typ @ f): 3.3dB @ 100MHz	Gain: 24dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V	Current - Collector (Ic) (Max): 15mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
BF771E6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3	In Stock515 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	Gain: 10dB ~ 15dB	Power - Max: 580mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
2SC4098T106P	Rohm Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 300MHZ UMT3	In Stock126 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 300MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
2SC5108-Y,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF TRANS RF NPN 10V 1GHZ SSM	In Stock199 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 6GHz	Noise Figure (dB Typ @ f): -	Gain: 11dB	Power - Max: 100mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
SMMBTH10-4LT3G	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 800MHZ SOT23-3	In Stock282 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 800MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 225mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V	Current - Collector (Ic) (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
2SC4713KT146R	Rohm Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 6V 800MHZ SMT3	In Stock406 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 6V	Frequency - Transition: 800MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
BFR340L3E6327XTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 9V 14GHZ TSLP-3-1	In Stock515 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 9V	Frequency - Transition: 14GHz	Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz	Gain: 17.5dB	Power - Max: 60mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V	Current - Collector (Ic) (Max): 10mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-101, SOT-883	Supplier Device Package: PG-TSLP-3-1
55GN01FA-TL-H	ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 5.5GHZ 3SSFP	In Stock299 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 4.5GHz ~ 5.5GHz	Noise Figure (dB Typ @ f): 1.9dB @ 1GHz	Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V	Current - Collector (Ic) (Max): 70mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-81	Supplier Device Package: 3-SSFP
2SC4618TLN	Rohm Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 300MHZ EMT3	In Stock210 More on Order	Manufacturer: Rohm Semiconductor	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 25V	Frequency - Transition: 300MHz	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 1mA, 6V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: EMT3
BFR35APE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ SOT23-3	In Stock296 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	Gain: 10.5dB ~ 16dB	Power - Max: 280mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V	Current - Collector (Ic) (Max): 45mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
15GN03FA-TL-H	ON Semiconductor	Transistors - Bipolar (BJT) - RF TRANS NPN VHF-UHF 70A 10V SSFP	In Stock435 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: -	Voltage - Collector Emitter Breakdown (Max): -	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Current - Collector (Ic) (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 3-SMD, Flat Leads	Supplier Device Package: 3-SSFP
BFP182RE7764HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT143R-4	In Stock554 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	Gain: 22dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-143R	Supplier Device Package: PG-SOT143R-4