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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 8/51
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | Power - Max | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 250MHZ SMINI3 |
In Stock215 More on Order |
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Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 250MHz |
Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz |
Gain: - |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SMini3-G1 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 4.7GHZ PCP |
In Stock2,027 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 4.7GHz |
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz |
Gain: 8dB |
Power - Max: 1.3W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V |
Current - Collector (Ic) (Max): 150mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: PCP |
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|
Micro Commercial Co |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23 |
In Stock337 More on Order |
|
Manufacturer: Micro Commercial Co |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 450MHZ SOT23-3 |
In Stock340 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 40V |
Frequency - Transition: 450MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 6V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 11GHZ SOT143R |
In Stock296 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 11GHz |
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz |
Gain: 21.5dB |
Power - Max: 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-143R |
Supplier Device Package: SOT-143R |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 10.5GHZ SOT143B |
In Stock385 More on Order |
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Manufacturer: NXP USA Inc. |
Series: Automotive, AEC-Q101 |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 10.5GHz |
Noise Figure (dB Typ @ f): 0.65dB @ 900MHz |
Gain: 20dB |
Power - Max: 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-253-4, TO-253AA |
Supplier Device Package: SOT-143B |
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ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 7GHZ 3MCP |
In Stock281 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1dB @ 1GHz |
Gain: 12dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V |
Current - Collector (Ic) (Max): 70mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: 3-MCP |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 9GHZ TO236AB |
In Stock292 More on Order |
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Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 9GHz |
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz |
Gain: - |
Power - Max: 360mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: TO-236AB (SOT23) |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 400MHZ SOT23-3 |
In Stock441 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 40V |
Frequency - Transition: 400MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SC59 |
In Stock1,583 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz |
Gain: 11dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SC-59 |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 25V 650MHZ SOT23-3 |
In Stock564 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 25V |
Frequency - Transition: 650MHz |
Noise Figure (dB Typ @ f): - |
Gain: - |
Power - Max: 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ SMQ |
In Stock282 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz |
Gain: 13dB |
Power - Max: 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-61AA |
Supplier Device Package: SMQ |
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Diodes Incorporated |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 600MHZ SOT323 |
In Stock544 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 600MHz |
Noise Figure (dB Typ @ f): 6dB @ 60MHz |
Gain: 15dB |
Power - Max: 330mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-70, SOT-323 |
Supplier Device Package: SOT-323 |
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Panasonic Electronic Components |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 250MHZ SSMINI3 |
In Stock267 More on Order |
|
Manufacturer: Panasonic Electronic Components |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 20V |
Frequency - Transition: 250MHz |
Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz |
Gain: - |
Power - Max: 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V |
Current - Collector (Ic) (Max): 30mA |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-89, SOT-490 |
Supplier Device Package: SSMini3-F1 |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 7GHZ US6 |
In Stock561 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz |
Gain: 11.5dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
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ON Semiconductor |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 4.7GHZ PCP |
In Stock524 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 4.7GHz |
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz |
Gain: 8dB |
Power - Max: 1.3W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V |
Current - Collector (Ic) (Max): 150mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: PCP |
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CEL |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 10GHZ SOT143R |
In Stock310 More on Order |
|
Manufacturer: CEL |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 10V |
Frequency - Transition: 10GHz |
Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz |
Gain: 6.5dB ~ 11dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V |
Current - Collector (Ic) (Max): 35mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-143R |
Supplier Device Package: SOT-143R |
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Toshiba Semiconductor and Storage |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7GHZ PW-MINI |
In Stock137 More on Order |
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Manufacturer: Toshiba Semiconductor and Storage |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 7GHz |
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz |
Gain: 16.5dB |
Power - Max: 1.8W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-243AA |
Supplier Device Package: PW-MINI |
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NXP |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 11GHZ SOT223 |
In Stock450 More on Order |
|
Manufacturer: NXP USA Inc. |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 11GHz |
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz |
Gain: 10.5dB |
Power - Max: 1W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V |
Current - Collector (Ic) (Max): 60mA |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-261-4, TO-261AA |
Supplier Device Package: SOT-223 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 33V 316-01 |
In Stock534 More on Order |
|
Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 33V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 9dB |
Power - Max: 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V |
Current - Collector (Ic) (Max): 9A |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: 316-01 |
Supplier Device Package: 316-01, STYLE 1 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 33V 244-04 |
In Stock605 More on Order |
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Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 33V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 13dB |
Power - Max: 10W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V |
Current - Collector (Ic) (Max): 1.1A |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: 244-04 |
Supplier Device Package: 244-04, STYLE 1 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 355E-01 |
In Stock381 More on Order |
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Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 65V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 9dB |
Power - Max: 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V |
Current - Collector (Ic) (Max): 31A |
Operating Temperature: 200°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: 355E-01 |
Supplier Device Package: 355E-01, Style 1 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 5.8V 22GHZ SOT343-4 |
In Stock107 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 5.8V |
Frequency - Transition: 22GHz |
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz |
Gain: 12.5dB ~ 26.5dB |
Power - Max: 230mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V |
Current - Collector (Ic) (Max): 70mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT23-3 |
In Stock636 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 12V |
Frequency - Transition: 8GHz |
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
Gain: 18.5dB |
Power - Max: 175mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V |
Current - Collector (Ic) (Max): 20mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.7V 45GHZ SOT343 |
In Stock312 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 4.7V |
Frequency - Transition: 45GHz |
Noise Figure (dB Typ @ f): 0.55dB ~ 1.8dB @ 150MHz ~ 10GHz |
Gain: 8.5dB ~30.5dB |
Power - Max: 160mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V |
Current - Collector (Ic) (Max): 45mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: SOT-343 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 24GHZ SOT343-4 |
In Stock203 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 5V |
Frequency - Transition: 24GHz |
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz |
Gain: 15.5dB |
Power - Max: 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V |
Current - Collector (Ic) (Max): 100mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 30GHZ SOT343-4 |
In Stock508 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 5V |
Frequency - Transition: 30GHz |
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz |
Gain: 16dB |
Power - Max: 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V |
Current - Collector (Ic) (Max): 80mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V 40GHZ SOT343-4 |
In Stock316 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 4.5V |
Frequency - Transition: 40GHz |
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
Gain: 24dB |
Power - Max: 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V |
Current - Collector (Ic) (Max): 50mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SC-82A, SOT-343 |
Supplier Device Package: PG-SOT343-4 |
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M/A-Com Technology Solutions |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 35V 211-11 |
In Stock528 More on Order |
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Manufacturer: M/A-Com Technology Solutions |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 35V |
Frequency - Transition: - |
Noise Figure (dB Typ @ f): - |
Gain: 13dB |
Power - Max: 150W |
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V |
Current - Collector (Ic) (Max): 20A |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Package / Case: 211-11, Style 2 |
Supplier Device Package: 211-11, Style 2 |
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Infineon Technologies |
Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ SOT23-3 |
In Stock505 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
Transistor Type: NPN |
Voltage - Collector Emitter Breakdown (Max): 15V |
Frequency - Transition: 5GHz |
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz |
Gain: 10.5dB ~ 16dB |
Power - Max: 280mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V |
Current - Collector (Ic) (Max): 45mA |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SOT-23-3 |