Top

Bipolar (BJT) - RF

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 27/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 182T E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SC75

In Stock590

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
BFR 183T E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SC75

In Stock207

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 19.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
BFR 340T E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ SC75

In Stock442

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Gain: 15dB
Power - Max: 60mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
BFR 360L3 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ TSLP-3-1

In Stock419

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
BFR 360T E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ SC75

In Stock238

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 13.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
BFR 380T E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9V 14GHZ SC75

In Stock244

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
BFR 740L3 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 42GHZ TSLP-3

In Stock511

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3
BFR 92W E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

In Stock280

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
BFR 93AW E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ SOT323-3

In Stock448

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
BFR 949L3 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ TSLP-3-1

In Stock442

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1
BFR 949T E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ SC75

In Stock638

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75
BFS17WE6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT323-3

In Stock416

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
BFS 360L6 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 9V 14GHZ TSLP-6-1

In Stock369

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
Gain: 10dB ~ 14.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-1
BFS 380L6 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 9V 14GHZ TSLP-6-1

In Stock636

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
Gain: 8dB ~ 12dB
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-1
BFS 386L6 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 14GHZ TSLP-6-1

In Stock459

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain: 10dB ~ 14.5dB
Power - Max: 210mW, 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 35mA, 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-1
BFS 460L6 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN 5.8V 22GHZ TSLP-6

In Stock522

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain: 10dB ~ 14.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-1
BFS 466L6 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 5V/9V 14GHZ TSLP

In Stock232

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5V, 9V
Frequency - Transition: 22GHz, 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain: 12dB ~ 17dB
Power - Max: 200mW, 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 50mA, 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-1
BFS 469L6 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 5V/10V 9GHZ TSLP

In Stock267

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain: 14.5dB
Power - Max: 200mW, 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Current - Collector (Ic) (Max): 50mA, 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-1
BFS 481 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 8GHZ SOT363-6

In Stock389

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 20dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
BFS 483 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 8GHZ SOT363-6

In Stock650

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
BGB 540 E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V SOT343-4

In Stock388

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 16dB ~ 17.5dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFP740E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 42GHZ SOT343-4

In Stock356

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
BFP 740F E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 42GHZ 4TSFP

In Stock447

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
Gain: 27.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
BFR 705L3RH E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 39GHZ TSLP-3

In Stock580

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 39GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 25dB
Power - Max: 40mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 7mA, 3V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3
BFR750L3RHE6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.7V 37GHZ TSLP-3

In Stock340

More on Order

Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain: 21dB
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3
BF959
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 700MHZ TO92-3

In Stock607

More on Order

Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
BF959G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 700MHZ TO92-3

In Stock466

More on Order

Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
BF959RL1
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 700MHZ TO92-3

In Stock437

More on Order

Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
BF959RL1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 700MHZ TO92-3

In Stock135

More on Order

Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
BF959ZL1
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 700MHZ TO92-3

In Stock532

More on Order

Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3