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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 28/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BF959ZL1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 700MHZ TO92-3

In Stock485

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MMBTH10-4LT1
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 800MHZ SOT23-3

In Stock509

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
MPS5179RLRAG
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

In Stock234

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MPS5179RLRPG
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

In Stock365

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MPSH10RLRPG
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

In Stock265

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MPSH17RLRAG
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

In Stock572

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MSC2295-BT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC59

In Stock251

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
MSC2295-CT1
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC59

In Stock280

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
MSC2295-CT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC59

In Stock265

More on Order

Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
MSC3930-BT1
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC70-3

In Stock310

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
MSC3930-BT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC70-3

In Stock318

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
MSD2714AT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SC59

In Stock473

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
NSVF2250WT1
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V SC70-3

In Stock302

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
NSVF2250WT1G
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V SC70-3

In Stock222

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
BFP 520F E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 45GHZ 4TSFP

In Stock496

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
BFP 540F E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 30GHZ 4TSFP

In Stock424

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
BFP620E7764BTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 65GHZ SOT343-4

In Stock566

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain: 21.5dB
Power - Max: 185mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
NESG270034-T1-AZ
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9.2V 3POWERMINIMOLD

In Stock213

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.2V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: 3-PowerMiniMold
START405TR
STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.5V SOT343

In Stock193

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Manufacturer: STMicroelectronics
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 19dB
Power - Max: 45mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -
BFP540FESDE6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 30GHZ 4TSFP

In Stock269

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
ZUMTS17HTA
Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ SOT323

In Stock488

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Manufacturer: Diodes Incorporated
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
2SC3931GCL
Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ SMINI3

In Stock379

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Manufacturer: Panasonic Electronic Components
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
START499ETR
STMicroelectronics

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4.5V 1.9GHZ SOT343

In Stock118

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Manufacturer: STMicroelectronics
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz
Gain: 15dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 160mA, 4V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
BF199_D74Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 1.1GHZ TO92-3

In Stock267

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
BF199_J35Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 1.1GHZ TO92-3

In Stock418

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
BF240_J35Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 1.1GHZ TO92-3

In Stock484

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MMBTH81_D87Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23-3

In Stock219

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
MPS5179_D26Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

In Stock242

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MPS5179_D27Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

In Stock495

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
MPS5179_D75Z
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

In Stock428

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3