Bipolar (BJT) - RF

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CategorySemiconductors / Transistors / Bipolar (BJT) - RF

Records 1,506

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 420F E6327	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ 4TSFP	In Stock581 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5V	Frequency - Transition: 25GHz	Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz	Gain: 19.5dB	Power - Max: 160mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, Flat Leads	Supplier Device Package: 4-TSFP
BFP182WE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4	In Stock435 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	Gain: 22dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFP183WE6327BTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4	In Stock478 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	Gain: 22dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFP193WE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT343-4	In Stock438 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	Gain: 13.5dB ~ 20.5dB	Power - Max: 580mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFP196WE6327HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 7.5GHZ SOT343-4	In Stock283 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 7.5GHz	Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	Gain: 12.5dB ~ 19dB	Power - Max: 700mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFR 181W E6327	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock473 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	Gain: 19dB	Power - Max: 175mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V	Current - Collector (Ic) (Max): 20mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BFR 182W E6327	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock629 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz	Gain: 19dB	Power - Max: 250mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V	Current - Collector (Ic) (Max): 35mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BFR 183W E6327	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock292 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	Gain: 18.5dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V	Current - Collector (Ic) (Max): 65mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
BFR 193W E6327	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ SOT323-3	In Stock525 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	Gain: 10.5dB ~ 16dB	Power - Max: 580mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: PG-SOT323-3
2SC3932GSL	Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.6GHZ SMINI3	In Stock495 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 1.6GHz	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-85	Supplier Device Package: SMini3-F2
2SC3932GTL	Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.6GHZ SMINI3	In Stock499 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: 1.6GHz	Noise Figure (dB Typ @ f): -	Gain: 20dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 2mA, 10V	Current - Collector (Ic) (Max): 50mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-85	Supplier Device Package: SMini3-F2
2SC3934G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 4.5GHZ SMINI3	In Stock353 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 4.5GHz	Noise Figure (dB Typ @ f): 1.3dB ~ 2.5dB @ 800MHz	Gain: 9dB ~ 12dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-85	Supplier Device Package: SMini3-F2
2SC3937G0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 6GHZ SMINI3-F2	In Stock577 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 10V	Frequency - Transition: 6GHz	Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 800MHz	Gain: 13dB	Power - Max: 150mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-85	Supplier Device Package: SMini3-F2
START499D	STMicroelectronics	Transistors - Bipolar (BJT) - RF RF TRANS NPN 4.5V SOT89	In Stock511 More on Order	Manufacturer: STMicroelectronics	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 4.5V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 13dB ~ 14dB	Power - Max: 1.7W	DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 160mA, 3V	Current - Collector (Ic) (Max): 1A	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-243AA	Supplier Device Package: SOT-89
MRF544	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 70V 1.5GHZ TO39	In Stock619 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 70V	Frequency - Transition: 1.5GHz	Noise Figure (dB Typ @ f): -	Gain: 13.5dB	Power - Max: 3.5W	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V	Current - Collector (Ic) (Max): 400mA	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-39	Supplier Device Package: TO-39
MRF553G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRNS NPN 16V 175MHZ PWR MACRO	In Stock323 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 175MHz	Noise Figure (dB Typ @ f): -	Gain: 11dB ~ 13dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Power Macro	Supplier Device Package: Power Macro
MRF555	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V POWER MACRO	In Stock518 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 11dB ~ 13dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Power Macro	Supplier Device Package: Power Macro
MRF555T	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V POWER MACRO	In Stock272 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: 11dB ~ 12.5dB	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V	Current - Collector (Ic) (Max): 500mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Power Macro	Supplier Device Package: Power Macro
MRF559G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 16V 870MHZ MICRO X	In Stock326 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 16V	Frequency - Transition: 870MHz	Noise Figure (dB Typ @ f): -	Gain: 9.5dB	Power - Max: 2W	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V	Current - Collector (Ic) (Max): 150mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Micro-X ceramic (84C)	Supplier Device Package: Micro-X ceramic (84C)
MRF581	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 5GHZ MICRO X	In Stock263 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 18V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Micro-X ceramic (84C)	Supplier Device Package: Micro-X ceramic (84C)
MRF581A	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ MICRO X	In Stock479 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Micro-X ceramic (84C)	Supplier Device Package: Micro-X ceramic (84C)
MRF581G	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 18V 5GHZ MICRO X	In Stock341 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 18V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: Micro-X ceramic (84C)	Supplier Device Package: Micro-X ceramic (84C)
MRF904	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 4GHZ TO72	In Stock187 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 4GHz	Noise Figure (dB Typ @ f): 1.5dB @ 450MHz	Gain: 6.5dB ~ 10.5dB	Power - Max: 200mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Current - Collector (Ic) (Max): 30mA	Operating Temperature: 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AF, TO-72-4 Metal Can	Supplier Device Package: TO-72
MRF5812GR2	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO	In Stock520 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
MRF5812GR1	Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 5GHZ 8SO	In Stock274 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 15V	Frequency - Transition: 5GHz	Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz	Gain: 13dB ~ 15.5dB	Power - Max: 1.25W	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
BFP405E6740HTSA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 25GHZ SOT343-4	In Stock355 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5V	Frequency - Transition: 25GHz	Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz	Gain: 23dB	Power - Max: 75mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V	Current - Collector (Ic) (Max): 25mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
BFP450E6433BTMA1	Infineon Technologies	Transistors - Bipolar (BJT) - RF RF TRANS NPN 5V 24GHZ SOT343-4	In Stock272 More on Order	Manufacturer: Infineon Technologies	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 5V	Frequency - Transition: 24GHz	Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz	Gain: 15.5dB	Power - Max: 450mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V	Current - Collector (Ic) (Max): 100mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-82A, SOT-343	Supplier Device Package: PG-SOT343-4
AT-41535G	Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 8GHZ 35 MICRO X	In Stock371 More on Order	Manufacturer: Broadcom Limited	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 8GHz	Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz	Gain: 10dB ~ 18dB	Power - Max: 500mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V	Current - Collector (Ic) (Max): 60mA	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD (35 micro-X)	Supplier Device Package: 35 micro-X
AT-42000-GP4	Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 9GHZ CHIP	In Stock216 More on Order	Manufacturer: Broadcom Limited	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 12V	Frequency - Transition: 9GHz	Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz	Gain: 10.5dB ~ 14dB	Power - Max: 600mW	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V	Current - Collector (Ic) (Max): 80mA	Operating Temperature: 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Chip
AT-64000-GP4	Broadcom	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V BIPOLAR CHIP	In Stock430 More on Order	Manufacturer: Broadcom Limited	Series: -	Transistor Type: NPN	Voltage - Collector Emitter Breakdown (Max): 20V	Frequency - Transition: -	Noise Figure (dB Typ @ f): -	Gain: -	Power - Max: 3W	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V	Current - Collector (Ic) (Max): 200mA	Operating Temperature: 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: -