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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 33/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FH105A-TR-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 8GHZ 6MCP

In Stock454

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
Gain: 10dB @ 1.5GHz
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-MCP
MCH4013-TL-E
ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 22.5GHZ 4MCPH

In Stock397

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 22.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 16dB
Power - Max: 50mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-MCPH
NE851M13-T3-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.5V 4.5GHZ M13

In Stock232

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: 4dB ~ 5.5dB @ 2GHZ
Power - Max: 140mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-3
Supplier Device Package: M13
NE461M02-T1-AZ
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V SOT89

In Stock239

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
NE662M04-T2-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.3V 25GHZ SOT343F

In Stock193

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 18dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F
NE664M04-T2-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 20GHZ SOT343F

In Stock516

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 20GHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 735mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F
NE678M04-T2-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 6V 12GHZ SOT343F

In Stock256

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 13.5dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F
NE68133-T1B-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ SOT23

In Stock374

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
NE85639-T1-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 9GHZ SOT143

In Stock386

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
NESG2030M04-T2-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.3V 60GHZ M04

In Stock302

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.3V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
Gain: 16dB
Power - Max: 80mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04
NESG260234-T1-AZ
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9.2V 3POWERMINIMOLD

In Stock214

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.2V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: 3-PowerMiniMold
UPA801T-T1-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 4.5GHZ SOT363

In Stock488

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Manufacturer: CEL
Series: -
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
LM3046M
Texas Instruments

Transistors - Bipolar (BJT) - RF

RF TRANS 5 NPN 15V 14SOIC

In Stock218

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Manufacturer:
Series: -
Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC
LM3046MX
Texas Instruments

Transistors - Bipolar (BJT) - RF

RF TRANS 5 NPN 15V 14SOIC

In Stock536

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Manufacturer:
Series: -
Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC
NE85633-T1B-R23-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SOT23

In Stock438

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
NE85634-T1-RE-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6.5GHZ SOT89

In Stock573

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Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 9dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
NE85633-R23-A
CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SOT23

In Stock361

More on Order

Manufacturer: CEL
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
BF799E6327HTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 800MHZ SOT23-3

In Stock506

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
BFQ 19S E6327
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5.5GHZ SOT89

In Stock527

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain: 7dB ~ 11.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 210mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
BFR92WH6327XTSA1
Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

In Stock265

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Manufacturer: Infineon Technologies
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
MAX2601ESA-T
Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

In Stock604

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Manufacturer: Maxim Integrated
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP
MAX2602ESA
Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

In Stock619

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Manufacturer: Maxim Integrated
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP
MAX2602ESA-T
Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

In Stock428

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Manufacturer: Maxim Integrated
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP
MS2441
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M112

In Stock371

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112
MS2472
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M112

In Stock401

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 5.6dB
Power - Max: 1350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112
MS2473
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ M112

In Stock393

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 2300W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
Current - Collector (Ic) (Max): 46A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112
MS2552
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 2NLFL

In Stock451

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.7dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2NLFL
Supplier Device Package: 2NLFL
MS2553C
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 1.15GHZ M220

In Stock461

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10.5dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220
MS2554
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M218

In Stock435

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218
0510-50A
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 27V 1GHZ 55AV

In Stock460

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 27V
Frequency - Transition: 500MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 3.7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AV
Supplier Device Package: 55AV