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CategorySemiconductors / Transistors / Bipolar (BJT) - RF
Records 1,506
Page 34/51
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
0910-150M
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1GHZ 55KT

In Stock218

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 890MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.1dB ~ 8.5dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT
0910-60M
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1GHZ 55AW

In Stock409

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 890MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 180W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW
0912-25
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.215GHZ 55CT

In Stock331

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT
0912-45
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 60V 1.215GHZ 55CT

In Stock413

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 4.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT
0912-7
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 60V 1.215GHZ 55CX

In Stock518

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX
1000MP
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 1.15GHZ 55FW

In Stock520

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55FW
Supplier Device Package: 55FW
1002MP
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 50V 1.215GHZ 55FW-1

In Stock443

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.24dB ~ 11dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1
1004MP
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 50V 1.215GHZ 55FW-1

In Stock457

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 9dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1
1014-12
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55LT

In Stock558

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 6.8dB
Power - Max: 39W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT
1014-6A
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55LV

In Stock310

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 7.5dB
Power - Max: 19W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV
1015MP
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55FW

In Stock532

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 11dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW
Supplier Device Package: 55FW
1075MP
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55FW-1

In Stock386

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 7.6dB ~ 8.5dB
Power - Max: 250W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55FW-1
Supplier Device Package: 55FW-1
10A060
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 24V 1GHZ 55FT

In Stock342

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 21W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT
1214-110M
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 1.4GHZ 55KT

In Stock549

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT
1214-150L
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.4GHZ 55ST-1

In Stock341

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.15dB ~ 8.7dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1
1214-220M
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 1.4GHZ 55ST

In Stock608

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST
MDS400
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.09GHZ 55KT

In Stock559

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1450W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT
MDS500L
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 1.09GHZ 55ST

In Stock238

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9.2dB
Power - Max: 833W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST
MDS60L
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55AW

In Stock413

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW
MDS70
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55CX

In Stock530

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.3dB ~ 11.65dB
Power - Max: 225W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CX
Supplier Device Package: 55CX
MDS800
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55ST-1

In Stock521

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8.6dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 60A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1
MPA201
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 22V 2GHZ 55AU

In Stock356

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AU
Supplier Device Package: 55AU
MRF545
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 70V 1.4GHZ TO39

In Stock525

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
MRF586
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 17V 3GHZ TO39

In Stock429

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: 13.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
MS1001
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 30MHZ M174

In Stock320

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174
MS1003
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 175MHZ M111

In Stock543

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 136MHz ~ 175MHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M111
Supplier Device Package: M111
MS1004
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 30MHZ M177

In Stock517

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14.5dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M177
Supplier Device Package: M177
MS1008
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 30MHZ M164

In Stock511

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Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M164
Supplier Device Package: M164
MS1051
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 30MHZ M174

In Stock477

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 13dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174
MS1076
Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 30MHZ M174

In Stock477

More on Order

Manufacturer: Microsemi Corporation
Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174