Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 424/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1761,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO226-3	In Stock300 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA1761,T6F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO226-3	In Stock264 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SA1837(LBSAN,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock456 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837(PAIO,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock510 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock242 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,HFEMBJF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock178 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,HFEYHF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock514 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,HFEYHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock412 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,NSEIKIF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock311 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,S1CSF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock323 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,TOA1F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock325 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,WNLF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock108 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,YHF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock310 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1837,YHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3	In Stock567 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 70MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1869-Y(JKT,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3	In Stock526 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 10W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1869-Y(Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3	In Stock279 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 10W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1869-Y,MTSAQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3	In Stock631 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 10W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1869-Y,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3	In Stock144 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 10W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1930(LBS2MATQ,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3	In Stock581 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1930(ONK,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3	In Stock306 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1930,CKQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3	In Stock401 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1930,LBS2DIAQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3	In Stock538 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1930,ONKQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3	In Stock521 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1930,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3	In Stock323 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931(NOMARK,A,Q	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock302 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,BOSCHQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock588 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,KEHINQ(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock403 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,NETQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock533 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,NETQ(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock385 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1931,NIKKIQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3	In Stock473 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 60MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS