Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 427/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2235-Y(6MBH1,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock603 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(DNSO,AF)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock272 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(MBSH1,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock271 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6CANOFM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock349 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6CN,A,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock158 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6FJT,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock469 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6FJT,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock311 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6KMATFM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock537 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6ND,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock404 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y(T6OMI,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock190 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock485 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y,T6ASHF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock252 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock331 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y,T6KEHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock351 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y,T6USNF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock377 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-Y,USNHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock362 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2383-O(T6OMI,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 160V TO226-3	In Stock336 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 160V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2383-O,T6ALPF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 160V TO226-3	In Stock412 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 160V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2383-Y(T6DNS,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 160V TO226-3	In Stock404 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 160V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2383-Y,T6KEHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 160V TO226-3	In Stock473 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 160V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2482(FJTN,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 100MA 300V TO226-3	In Stock373 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 300V	Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2482(T6TOJS,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 100MA 300V TO226-3	In Stock530 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 300V	Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 900mW	Frequency - Transition: 50MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-O(ND1,AF)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock275 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-O(ND2,AF)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock611 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-O(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock587 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-O,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock217 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(6MBH1,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock389 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(HIT,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock188 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6CANOFM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock496 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6CN,A,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock335 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD