Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 426/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SB1495,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 100V TO220-3	In Stock561 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SB1495,Q(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 100V TO220-3	In Stock499 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC1627A-O,PASF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 400MA 80V TO226-3	In Stock289 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 400mA	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V	Power - Max: 800mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC1627A-Y,PASF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 400MA 80V TO226-3	In Stock325 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 400mA	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V	Power - Max: 800mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229(TE6SAN1F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock341 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(MIT1F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock438 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(MITIF,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock267 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(SHP,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock578 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(SHP1,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock560 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(T6MIT1FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock405 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(T6SAN2FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock485 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(T6SHP1FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock401 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-O(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock458 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(MIT,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock180 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(MIT1,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock604 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(SAN2,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock503 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(SHP,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock561 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(SHP1,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock215 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(T6MIT1FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock316 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(T6MITIFM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock409 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(T6ONK1FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock473 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(T6SAN2FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock613 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock162 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2229-Y,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 150V TO226-3	In Stock518 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Power - Max: 800mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235(T6KMAT,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock609 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-O(FA1,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock475 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-O(T6ASN,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock611 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-O(T6FJT,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock165 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-O(T6FJT,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock508 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2235-O,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V TO226-3	In Stock355 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 900mW	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD