Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 433/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC846BW/DG/B3F	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE SC-70	In Stock284 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 65V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
BC846BW/DG/B3X	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE SC-70	In Stock461 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 65V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
BC847B/DG/B3,215	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock371 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 6-TSSOP, SC-88, SOT-363	Supplier Device Package: SOT-363
BC847C/DG/B3,215	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock390 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC847C/DG/B3,235	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock607 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC847CW/DG/B2,115	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE SC-70	In Stock322 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
BC856B/DG/B3,215	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock369 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 65V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC856B/DG/B3,235	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock344 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 65V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC856BW/DG/B2,115	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE SC-70	In Stock611 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 65V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
BC856BW/DG/B3X	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE SC-70	In Stock536 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 65V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
BC857B/DG/B3,215	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock368 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC857C/DG/B3,215	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE TO-236AB	In Stock436 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V	Power - Max: 250mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
BC857CW/DG/B2,135	Nexperia	Transistors - Bipolar (BJT) - Single TRANS GEN PURPOSE SC-70	In Stock374 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	Transistor Type: PNP	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V	Power - Max: 200mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70
PBSS5140T/ZLR	Nexperia	Transistors - Bipolar (BJT) - Single TRANS BISS TO-236AB	In Stock489 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A	Current - Collector Cutoff (Max): 100nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V	Power - Max: 450mW	Frequency - Transition: 150MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: TO-236AB
2N5012	Microsemi	Transistors - Bipolar (BJT) - Single NPN SILICON TRANSISTOR	In Stock478 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 700V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
2N5013	Microsemi	Transistors - Bipolar (BJT) - Single NPN SILICON TRANSISTOR	In Stock289 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 800V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
2N5014	Microsemi	Transistors - Bipolar (BJT) - Single NPN SILICON TRANSISTOR	In Stock509 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 900V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
2N5015	Microsemi	Transistors - Bipolar (BJT) - Single NPN SILICON TRANSISTOR	In Stock440 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 1000V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTXV2N3251A	Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR	In Stock387 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/323	Transistor Type: PNP	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
JAN2N5012	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock296 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 700V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JAN2N5012S	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock215 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 700V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JAN2N5013	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock195 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 800V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JAN2N5013S	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock276 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 800V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JAN2N5014	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock195 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 900V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JAN2N5014S	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock191 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 900V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JAN2N5015	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock293 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 1000V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JAN2N5015S	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock606 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 1000V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JANTX2N5012	Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR	In Stock424 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 700V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTX2N5012S	Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR	In Stock559 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 700V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JANTX2N5013	Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR	In Stock459 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/727	Transistor Type: NPN	Current - Collector (Ic) (Max): 200mA	Voltage - Collector Emitter Breakdown (Max): 800V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 10nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5

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