Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 430/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC5549,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 400V TO226-3	In Stock484 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 400V	Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC5930(T2MITUM,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 600V SC71	In Stock163 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC5930(TPF2,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 600V SC71	In Stock450 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC6010(T2MITUM,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 600V SC71	In Stock181 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC6040(TPF2,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 800V SC71	In Stock505 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 800V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC6040,T2Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 800V SC71	In Stock499 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 800V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC6042,T2HOSH1Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 375V SC71	In Stock398 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 375V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC6042,T2WNLQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 375V SC71	In Stock464 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 375V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC6139,T2F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1.5A 160V SC71	In Stock362 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1.5A	Voltage - Collector Emitter Breakdown (Max): 160V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SD2129,ALPSQ(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock405 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2129,LS4ALPSQ(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock508 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2206(T6CANO,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 100V TO226-3	In Stock439 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2206(T6CNO,A,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 100V TO226-3	In Stock689 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2206(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 100V TO226-3	In Stock451 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2206,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 100V TO226-3	In Stock456 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2206A(T6SEP,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 120V TO226-3	In Stock432 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2257(CANO,A,Q)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock209 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2257(CANO,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock534 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2257(Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock309 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2257,KEHINQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock269 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2257,NIKKIQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock538 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2257,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 100V TO220-3	In Stock329 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SD2695(T6CANO,A,F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 60V TO226-3	In Stock295 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2695(T6CANO,F,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 60V TO226-3	In Stock304 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2695(T6CNO,A,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 60V TO226-3	In Stock396 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2695,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 60V TO226-3	In Stock478 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SD2695,T6F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 60V TO226-3	In Stock234 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
TTC009,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 80V TO220-3	In Stock342 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V	Power - Max: 2W	Frequency - Transition: 150MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
TTC009,F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 80V TO220-3	In Stock427 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V	Power - Max: 2W	Frequency - Transition: 150MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SA1020-Y,F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 50V TO226-3	In Stock514 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD