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Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single
Records 13,715
Page 432/458
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Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N4871
Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

In Stock408

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Manufacturer: Central Semiconductor Corp
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 300mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
2N3701
Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

In Stock404

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Manufacturer: Central Semiconductor Corp
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.8W
Frequency - Transition: 80MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
2N3955
Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

In Stock214

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Manufacturer: Central Semiconductor Corp
Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
FJP13007H2TU-F080
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TO220 HV FAST-SWITCHING NPN PWR

In Stock138

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 80W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
TSA894CT A3G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, PNP, -500V, -0.15A,

In Stock626

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
TSC966CT A3G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 400V, 0.3A, 100

In Stock299

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
TSC5302DCHC5G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 400V, 2A, 8A/A

In Stock614

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
Power - Max: 25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
TSC5303DCHC5G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 400V, 3A, 8A/A

In Stock304

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 400mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Power - Max: 30W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
TSC5304EDCHC5G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 400V, 4A, 8A/A

In Stock511

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 17 @ 1A, 5V
Power - Max: 35W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
TSC5802DCHC5G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 450V, 2.5A, 18A

In Stock531

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Power - Max: 30W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
TSC5804DCHC5G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 450V, 5A, 25A/A

In Stock330

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 200mA, 3V
Power - Max: 45W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
BC547A B1G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 45V, 0.1A, 110A

In Stock464

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
BC547B B1G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 45V, 0.1A, 200A

In Stock204

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
KTC3198-BL B1G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 50V, 0.15A, 70A

In Stock459

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 500mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
KTC3198-GR B1G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 50V, 0.15A, 120

In Stock173

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 500mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
KTC3198-O B1G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 50V, 0.15A, 200

In Stock624

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 500mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
KTC3198-Y B1G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 50V, 0.15A, 300

In Stock324

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 500mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
TS13005CK B0G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 400V, 3A, 5A/A

In Stock166

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V
Power - Max: 20W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
TSA894CT B0G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, PNP, -500V, -0.15A,

In Stock677

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
TSC966CT B0G
Taiwan Semiconductor Corporation

Transistors - Bipolar (BJT) - Single

TRANSISTOR, NPN, 400V, 0.3A, 100

In Stock476

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Manufacturer: Taiwan Semiconductor Corporation
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
6385_2N2907A
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP GENERAL PURPOSE

In Stock518

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
6585_2N4209
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP GENERAL PURPOSE

In Stock429

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V
Power - Max: 300mW
Frequency - Transition: 850MHz
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
6685_2N3906
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP GENERAL PURPOSE

In Stock304

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
6785_2N4033
ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP GENERAL PURPOSE

In Stock459

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Manufacturer: ON Semiconductor
Series: -
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 100µA, 5V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
TB100EP
WeEn Semiconductors

Transistors - Bipolar (BJT) - Single

TB100/TO-92/STANDARD MARKING *

In Stock510

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Manufacturer: WeEn Semiconductors
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 700V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 750mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
TB100ML
WeEn Semiconductors

Transistors - Bipolar (BJT) - Single

TB100/TO-92/STANDARD MARKING *

In Stock249

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Manufacturer: WeEn Semiconductors
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 700V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 750mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
BC846B/DG/B3,215
Nexperia

Transistors - Bipolar (BJT) - Single

TRANS GEN PURPOSE TO-236AB

In Stock363

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Manufacturer: Nexperia USA Inc.
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
BC846B/DG/B3,235
Nexperia

Transistors - Bipolar (BJT) - Single

TRANS GEN PURPOSE TO-236AB

In Stock265

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Manufacturer: Nexperia USA Inc.
Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
BC846BW/DG/B2,115
Nexperia

Transistors - Bipolar (BJT) - Single

TRANS GEN PURPOSE SC-70

In Stock466

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Manufacturer: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
BC846BW/DG/B2,135
Nexperia

Transistors - Bipolar (BJT) - Single

TRANS GEN PURPOSE SC-70

In Stock439

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Manufacturer: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70