Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 429/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC4604,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 50V TO226-3	In Stock473 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC4604,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 50V TO226-3	In Stock468 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC4604,T6F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 50V TO226-3	In Stock473 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC4682,T6CSF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 15V TO226-3	In Stock188 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V	Power - Max: 900mW	Frequency - Transition: 150MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC4682,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 15V TO226-3	In Stock522 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V	Power - Max: 900mW	Frequency - Transition: 150MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC4793(LBSAN,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock379 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793(PAIO,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock486 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock423 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,HFEF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock305 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,HFEF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock252 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,NSEIKIF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock349 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,TOA1F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock349 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,WNLF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock660 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,YHF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock406 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4793,YHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 1A 230V TO220-3	In Stock440 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 230V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4881(CANO,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 5A 50V TO220-3	In Stock299 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4881,LS1SUMIF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 5A 50V TO220-3	In Stock404 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V	Power - Max: 2W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC4935-Y,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 50V TO220-3	In Stock303 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 2W	Frequency - Transition: 80MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5171(LBS2MATQ,M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 180V TO220-3	In Stock622 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5171(ONK,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 180V TO220-3	In Stock539 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5171,MATUDQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 180V TO220-3	In Stock439 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5171,ONKQ(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 180V TO220-3	In Stock347 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5171,Q(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 180V TO220-3	In Stock394 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 180V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 5µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 2W	Frequency - Transition: 200MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5172(YAZK,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 5A 400V TO220-3	In Stock453 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 5A	Voltage - Collector Emitter Breakdown (Max): 400V	Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A	Current - Collector Cutoff (Max): 20µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS
2SC5201(T6MURATAFM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 600V TO226-3	In Stock320 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC5201(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 600V TO226-3	In Stock353 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC5201,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 600V TO226-3	In Stock226 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC5201,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 600V TO226-3	In Stock301 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC5201,T6MURAF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50MA 600V TO226-3	In Stock418 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 600V	Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V	Power - Max: 900mW	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC5459(TOJS,Q,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 400V TO220-3	In Stock503 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 3A	Voltage - Collector Emitter Breakdown (Max): 400V	Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V	Power - Max: 2W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-220-3 Full Pack	Supplier Device Package: TO-220NIS