Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 428/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2655-Y(T6ND1,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock373 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6ND2,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock593 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6ND3,AF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock363 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6OMI,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock487 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6STL,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock631 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(T6TOJ,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock508 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y(TE6,F,M)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock473 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock230 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,T6APNF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock214 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,T6F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock427 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,T6KEHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock478 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,T6SWFF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock623 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,T6WNLF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock439 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC2655-Y,WNLF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3	In Stock524 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC3225,T6ALPSF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 40V TO226-3	In Stock543 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 300mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 400mA, 1V	Power - Max: 900mW	Frequency - Transition: 220MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: TO-92MOD
2SC3328-O,T6KEHF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V TO226-3	In Stock234 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SC3328-Y,HOF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V TO226-3	In Stock438 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SC3328-Y,T6CKF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V TO226-3	In Stock399 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 900mW	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-226-3, TO-92-3 Long Body	Supplier Device Package: LSTM
2SC3665-Y(T2NSW,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71	In Stock480 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3665-Y,T2F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71	In Stock263 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3665-Y,T2NSF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71	In Stock290 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3665-Y,T2YNSF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 800MA 120V SC71	In Stock467 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 120V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V	Power - Max: 1W	Frequency - Transition: 120MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3668-O,T2CLAF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71	In Stock439 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3668-Y,F2PANF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71	In Stock216 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3668-Y,T2F(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71	In Stock254 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3668-Y,T2F(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71	In Stock111 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3668-Y,T2WNLF(J	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V SC71	In Stock309 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3669-Y(T2OMI,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V SC71	In Stock580 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3669-Y,T2PASF(M	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V SC71	In Stock310 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 2A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A	Current - Collector Cutoff (Max): 1µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V	Power - Max: 1W	Frequency - Transition: 100MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM
2SC3672-O(T2ASH,FM	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 100MA 300V SC71	In Stock359 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 300V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V	Power - Max: 1W	Frequency - Transition: 80MHz	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: SC-71	Supplier Device Package: MSTM